Calibration of 4H-SiC TCAD Models and Material Parameters

@article{Philip2006CalibrationO4,
  title={Calibration of 4H-SiC TCAD Models and Material Parameters},
  author={Matthew Philip and A. G. O'Neill},
  journal={2006 Conference on Optoelectronic and Microelectronic Materials and Devices},
  year={2006},
  pages={137-140}
}
There is a great deal of interest in silicon carbide (SiC) as an electronics material for high-voltage, high-power and high-temperature applications. Device simulation using Technology Computer Aided Design (TCAD) tools has proven to be an especially valuable tool in the study of SiC devices due to the inherent difficulties that exist in fabricating samples… CONTINUE READING