Calibration and electric characterization of p-MNOS RADFETs at different dose rates and temperatures

  title={Calibration and electric characterization of p-MNOS RADFETs at different dose rates and temperatures},
  author={Gennady I. Zebrev and P. A. Zimin and E. V. Mrozovskaya and Pavel A. Chubunov and Vasily S. Anashin},
  journal={Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment},
  • G. Zebrev, P. Zimin, V. Anashin
  • Published 1 April 2019
  • Physics
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Figures and Tables from this paper

Long-term irradiation effects in p-MNOS transistor: experiment results

The dosimeters based on RADFETs are high actual for utilizing in space where the low dose rates irradiation prevails. The paper presents new experimental data on low-intensity irradiation of p-MNOS

Investigation of Dose and Dose Rate Sensitivity of RADFETs in Space Environment

It was shown that there are low-dose-rate effects in the MNOS-structure, and that the compact model can successfully describe them. A new method was proposed for calibrating the on-board equipment

Long Term Logarithmic Annealing in p-MNOS RADFETs and Renormalization of Relaxation Parameters

It was experimentally shown that annealing (fading) of the pMNOS based dosimeters has close to logarithmic temporal dependence during and after irradiation. The results are shown to be consistent

TID Sensor Based on a Bipolar Transistor

The performance of the total ionizing dose sensor based on a bipolar transistor were researched in this work.



Simulation of Bipolar Transistor Degradation at Various Dose Rates and Electrical Modes for High Dose Conditions

Radiation response of bipolar devices irradiated under various electrical modes and dose rates at high doses has been studied. A nonlinear numerical model including ELDRS effects and electric field

Enhanced low dose rate sensitivity (ELDRS) observed in RADFET sensor

Absfruct-- We report the dose rate dependence of a pMOSFET (REM RADFET TOT500) that has been often employed as a dosimeter in previous space missions. A series of Iaboratory experiments show that

A dose rate independent pMOS dosimeter for space applications

A dual-dielectric pMOS dosimeter (RADFET) has been recently designed at Sandia. The RADFET consists of a thermally grown oxide and a CVD deposited nitride. With a negatively applied bias, holes are

Non-equilibrium carrier capture, recombination and annealing in thick insulators and their impact on radiation hardness

This paper describes an approach to prediction of the thick insulators' radiation response based on modeling of the charge yield, which is dependent on irradiation temperature, dose rate, and

Response of advanced bipolar processes to ionizing radiation

Ionizing radiation induced gain degradation in microcircuit bipolar polysilicon and crystalline emitter transistors is investigated. In this work, /sup 60/Co irradiation testing was performed on

Gamma-ray irradiation and post-irradiation responses of high dose range RADFETs

Gamma-ray irradiation and post-irradiation responses have been studied for the two types of radiation sensitive p-channel MOSFETs (RADFETs) from different manufacturers. In addition to, in dosimetric

Two-dimensional simulation of total dose effects on NMOSFET with lateral parasitic transistor

The trapped charge density in the LOCOS bird's beak resulting from irradiating a conventional NMOSFET has been analysed using a 2D finite element simulation. This paper shows a maximum of trapped

Modeling of Radiation-Induced Leakage and Low Dose-Rate Effects in Thick Edge Isolation of Modern MOSFETs

A procedure of SPICE parameters extraction for radiation-induced equivalent lumped parasitic transistor is proposed. Comparison of radiation-induced leakage current in test MOSFETs between total dose

An Embeddable SOI Radiation Sensor

The feasibility of developing an embeddable silicon-on-insulator (SOI) buried oxide MOS dosimeter (RadFET) has been demonstrated. This dosimeter takes advantage of the inherent properties for