CW operation of short-channel GaN/AlGaN doped channel heterostructure field effect transistors at 10 GHz and 15 GHz

@article{Khan1996CWOO,
  title={CW operation of short-channel GaN/AlGaN doped channel heterostructure field effect transistors at 10 GHz and 15 GHz},
  author={M. Asif Khan and Qi-Dai Chen and M. S. Shur and B. T. Dermott and J. Higgins and J. Burm and W. J. Schaff and L E Eastman},
  journal={IEEE Electron Device Letters},
  year={1996},
  volume={17},
  pages={584-585}
}
We report on a 0.15-/spl mu/m gate length AlGaN/GaN doped channel heterostructure field effect transistor (DC-HFET) with maximum frequency of oscillation in excess of 97 GHz. HFETs based on our doped channel design exhibited CW microwave operation up to 15 GHz with a maximum output power of approximately 270 mW/mm at 10 GHz. These values are still limited by parasitics and can be significantly improved by optimizing the device design. 

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Short channel GaN / AlGaN doped channel heterostructure field effect transistors with 36 . 1 cutoff frequency

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