CONDUCTION BAND IN SILICON : NUMERICAL VERSUS ANALYTICAL TWO-BAND k

@inproceedings{Sverdlov2007CONDUCTIONBI,
  title={CONDUCTION BAND IN SILICON : NUMERICAL VERSUS ANALYTICAL TWO-BAND k},
  author={Viktor Sverdlov and Hans Kosina and Siegfried Selberherr},
  year={2007}
}
A two-band k·p model for the conduction band of silicon is proposed and compared with other band structure models, notably the nonlocal empirical pseudo-potential method and the spds nearest-neighbor tight-binding model. The twoband k·p model is demonstrated to predict results consistent with the empirical pseudo-potential method, and to accurately describe… CONTINUE READING