CNTFET basics and simulation

  title={CNTFET basics and simulation},
  author={T. Dang and Lorena Anghel and R{\'e}gis Leveugle},
  journal={International Conference on Design and Test of Integrated Systems in Nanoscale Technology, 2006. DTIS 2006.},
This paper provides an overview of current types of CNTFETs and of some compact models. Using the available models, the influence of the parameters on the device characteristics was simulated and analyzed. The conclusion is that the tube diameter influences not only the current level, but also the threshold voltage of the CNTFET, while the contact resistance influences only the current level. From a designer's point of view, taking care of the parameter variations and in particular of the… CONTINUE READING
Highly Cited
This paper has 32 citations. REVIEW CITATIONS


Publications citing this paper.
Showing 1-10 of 26 extracted citations


Publications referenced by this paper.
Showing 1-10 of 14 references

Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes

  • S. J. Wind
  • App. Phys. Lett.,
  • 2002
Highly Influential
4 Excerpts

Towards models for CNT devices

  • D. Rondoni, J. Hoekstra
  • IEEE/ProRISC'05, pp. 272-278
  • 2005
2 Excerpts

Similar Papers

Loading similar papers…