CMOS reliability issues for emerging cryogenic Lunar electronics applications

  title={CMOS reliability issues for emerging cryogenic Lunar electronics applications},
  author={Tianbing Chen and Chendong Zhu and Laleh Najafizadeh and Bongim Jun and Adnan Ahmed and Ryan Diestelhorst and Gustavo Espinel and John D. Cressler},
We investigate the reliability issues associated with the application of CMOS devices contained within an advanced SiGe HBT BiCMOS technology to emerging cryogenic space electronics (e.g., down to 43 K, for Lunar missions). Reduced temperature operation improves CMOS device performance (e.g., transconductance, carrier mobility, subthreshold swing, and output current drive), as expected. However, operation at cryogenic temperatures also causes serious device reliability concerns, since it… CONTINUE READING
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Publications referenced by this paper.
Showing 1-10 of 16 references

Device scaling limits of Si MOSFETs and their application dependencies

  • DJ Frank, RH Dennard, E Nowak, PM Solomon, Y Taur, H SP.Wong
  • IEEE Trans Electron Dev
  • 2001
1 Excerpt

Low-temperature CMOS experience at IBM

  • R. Schmidt
  • IEEE Semi Ther Meas & Mana Symp 2000:112–3
  • 2000
1 Excerpt

A total resistance slopebased effective channel mobility extraction method for deep submicrometer CMOS technology

  • G Niu, JD Cressler, SJ Mathew, S. Subbanna
  • IEEE Trans Electron Dev
  • 1999
1 Excerpt

Operation and modeling of the MOS transistor

  • Y. Tsividis
  • Boston: McGraw-Hill;
  • 1999
1 Excerpt

Comparison of NMOS and PMOS hot carrier effects from 300 to 77 K

  • M Song, KP MacWilliams, JCS. Woo
  • IEEE Trans Electron Dev
  • 1997
1 Excerpt

CMOS hotcarrier degradation and device lifetime at cryogenic temperatures

  • RJ Wang, RC Lacoe, KP MacWilliams, M Song
  • IEEE Inter Integ Relia Workshop
  • 1996

Low temperature CMOS—a brief review

  • WF Clark, BE Kareh, RG Pires, SL Titcomb, RL. Anderson
  • IEEE Trans Comp Hybrids & Manu Tech
  • 1992
1 Excerpt

Temperature dependence of the channel hot-carrier degradation of n-channel MOSFET’s

  • P Heremans, GVD Bosch, R Bellens, G Groeseneken, HE. Maes
  • IEEE Trans Electron Dev
  • 1990
1 Excerpt

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