CMOS compatible super junction LDMOST with N-buffer layer

@article{Park2005CMOSCS,
  title={CMOS compatible super junction LDMOST with N-buffer layer},
  author={Il-Yong Park and C. Andre T. Salama},
  journal={Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.},
  year={2005},
  pages={163-166}
}
A CMOS compatible super junction LDMOST (SJ-LDMOST) structure, which reduces substrate-assisted depletion effects, is reported. The proposed structure uses a N-buffer layer between the pillars and the P-substrate to achieve charge compensation between the pillars, the N-buffer layer and the P-substrate. The new structure features high breakdown voltage, low on resistance, excellent gate charge characteristics and reduced sensitivity to doping imbalance in the pillars. 
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