CMOS compatible super junction LDMOST with N-buffer layer

  title={CMOS compatible super junction LDMOST with N-buffer layer},
  author={Il-Yong Park and C. Andre T. Salama},
  journal={Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.},
A CMOS compatible super junction LDMOST (SJ-LDMOST) structure, which reduces substrate-assisted depletion effects, is reported. The proposed structure uses a N-buffer layer between the pillars and the P-substrate to achieve charge compensation between the pillars, the N-buffer layer and the P-substrate. The new structure features high breakdown voltage, low on resistance, excellent gate charge characteristics and reduced sensitivity to doping imbalance in the pillars. 
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Publications referenced by this paper.
Showing 1-7 of 7 references

Sj/resurf Ldmost

IEEE Transactions on Electron Devices • 2004

Super junction LDMOST in silicon-on-Sapphire technology (SJ-LDMOST),

Sameh G. Nassif-Khalil, C. Andre T. Salama
Proc. Int. Symp. Power Semiconductor Devices and ICs (ISPSD), • 2002

Lateral unbalanced super junction (USJ) / 3D-RESURF for high breakdown voltage on SOI,

R. Ng, F. Udrea, +3 authors M. Nishiura
Int. Symp. Power Semiconductor Devices and ICs (ISPSD), • 2001

120 V interdigitated-drain LDMOS (IDLDMOS) on SOI substrate breaking power LDMOS limit,

Shuming Xu, K. P. Gan, Ganesh S. Samudra, Yung C. Liang, Johnny K.O. Sin
IEEE Trans. Electron Devices, • 2000

Theory of semiconductor superjunction devices

Tatsuhiko Fujihira
Jpn . J . Appl . Phys . • 1997

Potential of SOI power MOSFETs as a switching device for megahertz DC/DC converters,

T. Sakai, S. Matsumoto, I. J. Kim, T. Fujumitsu, T. Yachi
IEEE Power Electronics Specialist Conference (PESC) Proceedings, • 1994

Nassif - Khalil and C . Andre T . Salama , “ SJ / RESURF LDMOST

G. Sameh
IEEE Trans . Electron Devices

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