CMOS compatible nanoscale nonvolatile resistance switching memory.

@article{Jo2008CMOSCN,
  title={CMOS compatible nanoscale nonvolatile resistance switching memory.},
  author={Sung Hyun Jo and Wei Lu},
  journal={Nano letters},
  year={2008},
  volume={8 2},
  pages={
          392-7
        }
}
We report studies on a nanoscale resistance switching memory structure based on planar silicon that is fully compatible with CMOS technology in terms of both materials and processing techniques employed. These two-terminal resistance switching devices show excellent scaling potential well beyond 10 Gb/cm2 and exhibit high yield (99%), fast programming speed (5 ns), high on/off ratio (10(3)), long endurance (10(6)), retention time (5 months), and multibit capability. These key performance… CONTINUE READING
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