CMOS-compatible AlN piezoelectric micromachined ultrasonic transducers

@article{Shelton2009CMOScompatibleAP,
  title={CMOS-compatible AlN piezoelectric micromachined ultrasonic transducers},
  author={Stefon E. Shelton and M. Chan and H. Park and David A. Horsley and Bernhard Boser and Igor I. Izyumin and Richard J. Przybyla and Tim Frey and M. Judy and Kieran Nunan and Firas N. Sammoura and Ken Yang},
  journal={2009 IEEE International Ultrasonics Symposium},
  year={2009},
  pages={402-405}
}
Piezoelectric micromachined ultrasonic transducers for air-coupled ultrasound applications were fabricated using aluminum nitride (AlN) as the active piezoelectric layer. The AlN is deposited via a low-temperature sputtering process that is compatible with deposition on metalized CMOS wafers. An analytical model describing the electromechanical response is presented and compared with experimental measurements. The membrane deflection was measured to be 210 nm when excited at the 220 kHz… CONTINUE READING
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