CMOS SPAD Based on Photo-Carrier Diffusion Achieving PDP >40% From 440 to 580 nm at 4 V Excess Bias

@article{Veerappan2015CMOSSB,
  title={CMOS SPAD Based on Photo-Carrier Diffusion Achieving PDP >40% From 440 to 580 nm at 4 V Excess Bias},
  author={Chockalingam Veerappan and Edoardo Charbon},
  journal={IEEE Photonics Technology Letters},
  year={2015},
  volume={27},
  pages={2445-2448}
}
A wide spectral response standard CMOS single-photon avalanche diode enabling simplified circuit interface for large array realization is reported. In this letter, the conventional p+ -nwell junction photon detection probability (PDP) profile is enhanced utilizing photo-carrier diffusion processes, resulting in a considerable expansion of the sensitivity spectrum of more than 30%. The proposed device achieves PDP greater than 40% from 440 to 580 nm at a low excess bias, while the dark count… CONTINUE READING

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