CMOS Inverter Based on Gate-All-Around Silicon-Nanowire MOSFETs Fabricated Using Top-Down Approach

@article{Rustagi2007CMOSIB,
  title={CMOS Inverter Based on Gate-All-Around Silicon-Nanowire MOSFETs Fabricated Using Top-Down Approach},
  author={S. Rustagi and Navab Singh and W. W. Fang and K. Buddharaju and S. R. Omampuliyur and S. H. G. Teo and C. H. Tung and G. Lo and Narayanan Balasubramanian and D. L. Kwong},
  journal={IEEE Electron Device Letters},
  year={2007},
  volume={28},
  pages={1021-1024}
}
This letter demonstrates, for the first time, the integration of gate-all-around (GAA) Si-nanowire transistors into CMOS inverters using top-down approach. With matching of the drive currents of n- and p-MOSFETs using different gate lengths to achieve symmetric pull-up and pull-down, sharp ON- OFF transitions with high voltage gains (e.g., DeltaV OUT/DeltaV IN up to ~ 40 for V DD = 1.2 V) are obtained. The inverter maintains its good transfer characteristics and noise margins for wide range of… CONTINUE READING
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