CMOS Integrated Antenna-Coupled Field-Effect Transistors for the Detection of Radiation From 0.2 to 4.3 THz

@article{Boppel2012CMOSIA,
  title={CMOS Integrated Antenna-Coupled Field-Effect Transistors for the Detection of Radiation From 0.2 to 4.3 THz},
  author={Sebastian Boppel and Alvydas Lisauskas and Martin Mundt and Dalius Seliuta and Linas Minkevicius and Irmantas Kasalynas and Gintaras Valusis and Martin Mittendorff and Stephan Winnerl and Viktor Krozer and H. G. Roskos},
  journal={IEEE Transactions on Microwave Theory and Techniques},
  year={2012},
  volume={60},
  pages={3834-3843}
}
This paper reports on field-effect-transistor-based terahertz detectors for the operation at discrete frequencies spanning from 0.2 to 4.3 THz. They are implemented using a 150-nm CMOS process technology, employ self-mixing in the n-channels of the transistors and operate well above the transistors' cutoff frequency. The theoretical description of device operation by Dyakonov and Shur is extended in order to describe the device impedance, responsivity, and noise-equivalent power for a novel… CONTINUE READING
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