C- and L-band erbium-doped waveguide lasers with wafer-scale silicon nitride cavities.

  title={C- and L-band erbium-doped waveguide lasers with wafer-scale silicon nitride cavities.},
  author={Purnawirman and Jie Sun and Thomas N. Adam and Gerard Leake and Douglas Coolbaugh and Jonathan D. B. Bradley and Ehsan Shah Hosseini and Michael Robert Watts},
  journal={Optics letters},
  volume={38 11},
We report on integrated erbium-doped waveguide lasers designed for silicon photonic systems. The distributed Bragg reflector laser cavities consist of silicon nitride waveguide and grating features defined by wafer-scale immersion lithography and a top erbium-doped aluminum oxide layer deposited as the final step in the fabrication process. The resulting inverted ridge waveguide yields high optical intensity overlap with the active medium for both the 0.98 μm pump (89%) and 1.5 μm laser (87… CONTINUE READING
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