C-Si surface passivation by aluminum oxide studied with electron energy loss spectroscopy

Abstract

In this work the mechanism of c-Si surface passivation by Al<sub>2</sub>O<sub>3</sub> films is studied in detail by means of spatially resolved electron energy loss spectroscopy (EELS). The bonding configuration of Al and O is studied in as-deposited and annealed Al<sub>2</sub>O<sub>3</sub> films grown on c-Si substrates by plasma-assisted and thermal… (More)

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