Bulk growth of low resistivity n-type 4H-SiC using co-doping

@article{Suo2016BulkGO,
  title={Bulk growth of low resistivity n-type 4H-SiC using co-doping},
  author={H. Suo and Kazuma Eto and Tomoyasu Kato and Kazutoshi Kojima and Hiroshi Osawa and Hajime Okumura},
  journal={2016 European Conference on Silicon Carbide & Related Materials (ECSCRM)},
  year={2016},
  pages={1-1}
}
The growth of n-type 4H-SiC crystal was performed by physical vapor transport (PVT) growth method by using nitrogen and aluminum (N-Al) co-doping. Resistivity of N-Al co-doped 4H-SiC was as low as 5.8 mΩcm. The dislocation densities of N-Al co-doped substrates were evaluated by synchrotron radiation X-ray topography (SXRT). In addition, epitaxial growth was… CONTINUE READING