Building the electrical model of the pulsed photoelectric laser stimulation of an NMOS transistor in 90nm technology

@article{Sarafianos2013BuildingTE,
  title={Building the electrical model of the pulsed photoelectric laser stimulation of an NMOS transistor in 90nm technology},
  author={Alexandre Sarafianos and Olivier Gagliano and Valerie Serradeil and Mathieu Lisart and J-M Dutertre and Assia Tria},
  journal={2013 IEEE International Reliability Physics Symposium (IRPS)},
  year={2013},
  pages={5B.5.1-5B.5.9}
}
This paper presents measurements of pulsed photoelectrical laser stimulation of an NMOS transistor in 90nm technology. The laser power was able to trig the NPN parasitic bipolar Drain/Psubstrate/Source. An electrical model is proposed in order to simulate effects induced by the laser. Results extracted from the electrical simulator are compared to measurements. 

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  • A. Douin
  • D Thesis, Université Bordeaux I
  • 2008

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