Broadband high PAE GaN push-pull power amplifier for 500MHz to 2.5 GHz operation

@article{Yan2013BroadbandHP,
  title={Broadband high PAE GaN push-pull power amplifier for 500MHz to 2.5 GHz operation},
  author={Jonmei J. Yan and Young-Pyo Hong and Shintaro Shinjo and Kenji Mukai and Peter M. Asbeck},
  journal={2013 IEEE MTT-S International Microwave Symposium Digest (MTT)},
  year={2013},
  pages={1-3}
}
A broadband push-pull power amplifier with power added efficiency (PAE) greater than 47% from 500 MHz to 2.5 GHz is reported. The power amplifier comprises two GaN integrated circuits whose outputs are combined with a broadband balun to achieve power up to 20W. Each IC contains two stacked GaN HEMTs and is designed to employ a load impedance of 25Ω without any reactive matching in order to achieve broadband operation. To provide a better input impedance match to 25Ω and to reduce gain variation… CONTINUE READING
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