Broadband SOI PA with tunable matching network for improved LTE performances under high VSWR

Abstract

This paper describes the design of a broadband power amplifier (PA) for LTE PMR handheld applications using a 130nm SOI CMOS technology from ST Microelectronics with high efficiency LDMOS power transistors. The PA has two power modes (3GPP and PMR) and covers the 380–450MHz and 698–862MHz frequency bands thanks to the use of a low-loss SOI Tunable Output… (More)
DOI: 10.1109/ICECS.2016.7841245

Topics

8 Figures and Tables

Slides referencing similar topics