Broadband Optical‐Fiber‐Compatible Photodetector Based on a Graphene‐MoS2‐WS2 Heterostructure with a Synergetic Photogenerating Mechanism

  title={Broadband Optical‐Fiber‐Compatible Photodetector Based on a Graphene‐MoS2‐WS2 Heterostructure with a Synergetic Photogenerating Mechanism},
  author={Yifeng Xiong and Jinhui Chen and Yan-qing Lu and Fei Xu},
  journal={Advanced Electronic Materials},
Integrating 2D crystals into optical fibers can grant them optoelectronic properties and extend their range of applications. However, the ability to produce complicated structures is limited by the challenges of chemical vapor deposition manufacturing. Here, a 2D‐material heterostructure created on a fiber end‐face is successfully demonstrated by integrating a microscale multilayer graphene‐MoS2‐WS2 heterostructure film on it, using a simple layer‐by‐layer transferring method. The all‐in‐fiber… 
Self-powered and high-performance all-fiber integrated photodetector based on graphene/palladium diselenide heterostructures.
An all-fiber integrated photodetector is proposed and demonstrated by assembling a graphene/palladium diselenide (PdSe2) Van der Waals heterostructure onto the endface of a standard optical fiber. A
Ultrahigh Responsivity Photodetectors of 2D Covalent Organic Frameworks Integrated on Graphene
Ultrasensitive photodetectors are successfully fabricated with the COFETBC-TAPT -graphene heterostructure and exhibited an excellent overall performance, paving the way for a generation of high-performance applications in optoelectronics and many other fields.
Highly Sensitive, Fast Graphene Photodetector with Responsivity >106 A/W Using Floating Quantum Well Gate.
The proposed photodetector exhibits an extremely low noise equivalent power of $<4$ fW/$\sqrt{Hz}$ and a fast response with zero reminiscent photocurrent, which are attractive towards the demonstration of graphene-based highly sensitive, fast, broadband Photodetection technology.
A review of molybdenum disulfide (MoS2) based photodetectors: from ultra-broadband, self-powered to flexible devices.
  • H. Nalwa
  • Materials Science, Chemistry
    RSC advances
  • 2020
Two-dimensional transition metal dichalcogenides (2D TMDs) have attracted much attention in the field of optoelectronics due to their tunable bandgaps, strong interaction with light and tremendous
Architectural Design of Photodetector Based on 2D (MoS2 Nanosheets)/1D (WS2 Nanorods) Heterostructure Synthesized by Facile Hydrothermal Method
Hydrothermal technique is utilized to synthesize 2D/1D heterostructure based on MoS2 (nanosheets)/WS2 (nanorods) for photodetector application. The sensor was fabricated by drop cast technique. X-Ray
Ultrahigh Responsivity Photodetectors of Two-dimensional Covalent Organic Frameworks Integrated on Graphene
Two dimensional (2D) materials exhibit superior properties in electronic and optoelectronic fields. The wide demand for high performance optoelectronic devices promotes the exploration of diversified
All-Fiber Multifunctional Electrooptic Prototype Device with a Graphene/PMMA (Poly(methyl methacrylate)) Hybrid Film Integrated on Coreless Side-Polished Fibers
All-fiber optical devices with the merits of easy compatibility, strong anti-interference ability, and high robustness haven been extensively studied in the past years. However, the fabricating
Improving Performance of Hybrid Graphene–Perovskite Photodetector by a Scratch Channel
As a remarkable potential material for optoelectronics, perovskite has been widely studied in photodetectors. Here, a channel structure on graphene is introduced to achieve efficient separation of
Epitaxial Growth of Wafer-Scale Molybdenum Disulfide/Graphene Heterostructures by Metal–Organic Vapor-Phase Epitaxy and Their Application in Photodetectors
The epitaxial growth of a continuous molybdenum disulfide (MoS2) film on large-area graphene, which was directly grown on a sapphire substrate, is reported, and the MoS2/graphene heterostructure exhibited ultrahigh photoresponsivity upon exposure to visible light of a wide range of wavelengths.


Highly responsive and broadband photodetectors based on WS2–graphene van der Waals epitaxial heterostructures
van der Waals heterostructures built from two-dimensional (2D) materials have attracted wide attention because of their fascinating electrical and optoelectronic properties. Here, we report a highly
Lateral Graphene‐Contacted Vertically Stacked WS2/MoS2 Hybrid Photodetectors with Large Gain
A demonstration is presented of how significant improvements in all‐2D photodetectors can be achieved by exploiting the type‐II band alignment of vertically stacked WS2/MoS2 semiconducting
Ultrahigh-Gain Photodetectors Based on Atomically Thin Graphene-MoS2 Heterostructures
It is demonstrated that a photodetector based on the graphene/MoS2 heterostructure is able to provide a high photogain greater than 108 and graphene is transferable onto MoS2.
Improving the Performance of Graphene Phototransistors Using a Heterostructure as the Light-Absorbing Layer.
The improvement in graphene phototransistor performances is dominated by the efficient electron-hole pair dissociation due to interfacial built-in field rather than bulk absorption, which opens new possibilities for high-performance graphene-based optoelectronics.
Broadband MoS2 Field‐Effect Phototransistors: Ultrasensitive Visible‐Light Photoresponse and Negative Infrared Photoresponse
These findings offer a new approach to develop sub-bandgap photodetectors and other novel optoelectronic devices based on 2D layered materials and the bolometric effect is proposed as the cause of the negative photocurrent in the NIR regime.
A Highly Sensitive Graphene‐Organic Hybrid Photodetector with a Piezoelectric Substrate
To create a sensitive photodetector, the transparent and conductive properties of graphene and the optical and photovoltaic properties of poly(3‐hexylthiophene) (P3HT) are combined as a hybrid
Broadband photodetectors based on graphene-Bi2Te3 heterostructure.
The results show that the graphene-Bi2Te3 photodetector has much higher photoresponsivity (35 AW(-1) at a wavelength of 532 nm) and higher sensitivity (photoconductive gain up to 83), as compared to the pure monolayer graphene-based devices.
High-sensitivity optical-fiber-compatible photodetector with an integrated CsPbBr3-graphene hybrid structure
Assembling different materials into one optical fiber to realize multifunctional all-fiber devices is always a challenging task, mainly because the process is not compatible with current
Graphene photodetectors with ultra-broadband and high responsivity at room temperature.
An ultra-broadband photodetector design based on a graphene double-layer heterostructure is reported, demonstrating room-temperaturePhotodetection from the visible to the mid-infrared range, with mid- Infrared responsivity higher than 1 A W(-1), as required by most applications.
Hybrid graphene-quantum dot phototransistors with ultrahigh gain.
A gain of ∼10(8) electrons per photon and a responsivity of ∼ 10(7) A W(-1) in a hybrid photodetector that consists of monolayer or bilayer graphene covered with a thin film of colloidal quantum dots is demonstrated.