Breakthrough of 25Gb/s germanium on silicon avalanche photodiode

@article{Huang2016BreakthroughO2,
  title={Breakthrough of 25Gb/s germanium on silicon avalanche photodiode},
  author={Mengyuan Huang and Pengfei Cai and Su Nuan Li and Liangbo Wang and Tzung-I Su and Liyuan Zhao and Wang Chen and Ching-yin Hong and Dong Pan},
  journal={2016 Optical Fiber Communications Conference and Exhibition (OFC)},
  year={2016},
  pages={1-3}
}
Our germanium on silicon avalanche photodiodes (Ge/Si APDs) show a 1310nm sensitivity of -22.5dBm at 25.78Gb/s, which is, to our knowledge, the best sensitivity in reported 25Gb/s avalanche photodiodes. 

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