Breaking the speed limits of phase-change memory.

  title={Breaking the speed limits of phase-change memory.},
  author={Desmond Loke and Thomas H. Lee and W. J. Wang and Lu Ping Shi and Rong Zhao and Y. C. Yeo and Tow Chong Chong and Stephen R Elliott},
  volume={336 6088},
Phase-change random-access memory (PCRAM) is one of the leading candidates for next-generation data-storage devices, but the trade-off between crystallization (writing) speed and amorphous-phase stability (data retention) presents a key challenge. We control the crystallization kinetics of a phase-change material by applying a constant low voltage via prestructural ordering (incubation) effects. A crystallization speed of 500 picoseconds was achieved, as well as high-speed reversible switching… CONTINUE READING
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