Breakdown voltage and on-resistance of multi-RESURF LDMOS

@article{Choi2003BreakdownVA,
  title={Breakdown voltage and on-resistance of multi-RESURF LDMOS},
  author={E. K. Choi and Y. I. Choi and Sang K. Chung},
  journal={Microelectronics Journal},
  year={2003},
  volume={34},
  pages={683-686}
}
The breakdown voltage and on-resistance of a multi-RESURF LDMOS are studied numerically and analytically. The results are compared with those from the conventional LDMOS. Reduction of on-resistance by 23% is obtained for the multi-layer structure without degradation in the breakdown voltage. An analytical expression for the surface potential distribution of the multi-layer structure is derived which provides a useful mean to determine the breakdown voltage analytically in terms of the device… CONTINUE READING

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