Breakdown mechanism in short-channel MOS transistors

@article{Sun1978BreakdownMI,
  title={Breakdown mechanism in short-channel MOS transistors},
  author={E-tu zen Sun and J. Moll and Juergen Berger and B. Alders},
  journal={1978 International Electron Devices Meeting},
  year={1978},
  pages={478-482}
}
In this paper a new breakdown mechanism in a short channel MOS transistor is proposed based on experimental measurements of substrate currents. We have observed a negative resistance in the substrate current followed by conductivity modulation, similar to the operation of a unijunction transistor during switching. By adding an external substrate resistance, saturation of the substrate current was observed in conjunction with the turn-on of the parasitic NPN (source-substrate-drain) bi-polar… CONTINUE READING

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