Boundary states in graphene heterojunctions

@article{Ratnikov2010BoundarySI,
  title={Boundary states in graphene heterojunctions},
  author={Pavel V. Ratnikov and A. P. Silin},
  journal={Physics of the Solid State},
  year={2010},
  volume={52},
  pages={1763-1767}
}
A new type of states in graphene-based planar heterojunctions has been studied in the envelope wave function approximation. The condition for the formation of these states is the intersection between the dispersion curves of graphene and its gap modification. This type of states can also occur in smooth graphene-based heterojunctions. 

Heterostructures based on gapless graphene with different Fermi velocities

The properties of a single heterojunction between gapless graphenes with identical work functions but different Fermi velocities have been investigated. Reflection and transmission coefficients are

A Modified Planar Graphene-Based Heterostructure (Barrier—Quantum Well)

A planar graphene-based heterostructure is considered, which behaves differently: as a barrier or a quantum well at small or large momenta of charge carriers, respectively. This heterostructure

Size quantization in planar graphene-based heterostructures: Pseudospin splitting, interface states, and excitons

A planar quantum-well device made of a gapless graphene nanoribbon with edges in contact with gapped graphene sheets is examined. The size-quantization spectrum of charge carriers in an asymmetric

Pseudospin splitting of the energy spectrum of planar polytype graphene-based superlattices

The energy spectrum of planar polytype graphene-based superlattices has been investigated. It is shown that their energy spectrum undergoes pseudospin splitting due to the asymmetry of quantum wells

Tamm minibands in graphene-based planar superlattices

The Tamm minibands in planar superlattices composed of graphenes with different Fermi velocities and energy gaps have been investigated. It is shown that Tamm minibands arise only in the case of

Novel type of superlattices based on gapless graphene with the alternating Fermi velocity

We study a novel type of graphene-based superlattices formed owing to a periodic modulation of the Fermi surface. Such a modulation is possible for graphene deposited on a striped substrate made of

Quantum well of a new type based on gapless graphene with different fermi velocities

The energy spectrum of a new-type quantumwell composed of gapless graphenes with identical work functions and different Fermi velocities is investigated. Symmetric and asymmetric quantum wells are

Planar Graphene Superlattices

References

SHOWING 1-10 OF 26 REFERENCES

Ab initio study of graphene on SiC.

TLDR
Employing density-functional calculations, it is shown that, in contrast with earlier assumptions, the first carbon layer is covalently bonded to the substrate and cannot be responsible for the graphene-type electronic spectrum observed experimentally.

Accurate electronic band gap of pure and functionalized graphane from GW calculations

Using the GW approximation, we study the electronic structure of the recently synthesized hydrogenated graphene, named graphane. For both conformations, the minimum band gap is found to be direct a

Substrate-induced bandgap opening in epitaxial graphene.

TLDR
It is shown that when graphene is epitaxially grown on SiC substrate, a gap of approximately 0.26 eV is produced and it is proposed that the origin of this gap is the breaking of sublattice symmetry owing to the graphene-substrate interaction.

Interface states in junctions of two semiconductors with intersecting dispersion curves

A novel type of shallow interface state in junctions of two semiconductors without band inversion is identified within the envelope function approximation, using the two-band model. It occurs in

Giant intrinsic carrier mobilities in graphene and its bilayer.

TLDR
Measurements show that mobilities higher than 200 000 cm2/V s are achievable, if extrinsic disorder is eliminated and a sharp (thresholdlike) increase in resistivity observed above approximately 200 K is unexpected but can qualitatively be understood within a model of a rippled graphene sheet in which scattering occurs on intraripple flexural phonons.

Electronic properties of graphene

Graphene is the first example of truly two‐dimensional crystals – it's just one layer of carbon atoms. It turns out that graphene is a gapless semiconductor with unique electronic properties

Substrate-induced band gap in graphene on hexagonal boron nitride: Ab initio density functional calculations

We determine the electronic structure of a graphene sheet on top of a lattice-matched hexagonal boron nitride (h-BN) substrate using ab initio density functional calculations. The most stable

Theory of Electronic States and Transport in Carbon Nanotubes

A brief review is given of electronic and transport properties of carbon nanotubes obtained mainly in a k · p scheme. The topics include a giant Aharonov–Bohm effect on the band gap and a

Control of Graphene's Properties by Reversible Hydrogenation: Evidence for Graphane

TLDR
This work illustrates the concept of graphene as a robust atomic-scale scaffold on the basis of which new two-dimensional crystals with designed electronic and other properties can be created by attaching other atoms and molecules.

Suspended Graphene: a bridge to the Dirac point

The recent discovery of methods to isolate graphene 1-3 , a one-atom-thick layer of crystalline carbon, has raised the possibility of a new class of nano-electronics devices based on the