Bound electronic and free carrier nonlinearities in Silicon nanocrystals at 1550nm.

@article{Spano2009BoundEA,
  title={Bound electronic and free carrier nonlinearities in Silicon nanocrystals at 1550nm.},
  author={Rita Spano and Nicola Daldosso and M Cazzanelli and Lauren Ferraioli and Luca Tartara and Jin Yu and Vittorio Degiorgio and E Giordana and J-M. Fedeli and Lorenzo Pavesi},
  journal={Optics express},
  year={2009},
  volume={17 5},
  pages={3941-50}
}
We present a detailed investigation of the different processes responsible for the optical nonlinearities of silicon nanocrystals at 1550 nm. Through z-scan measurements, the bound-electronic and excited carrier contributions to the nonlinear refraction were measured in presence of two-photon absorption. A study of the nonlinear response at different excitation powers has permitted to determine the change in the refractive index per unit of photo-excited carrier density sigma(r) and the value… CONTINUE READING
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