Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron

  title={Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron},
  author={Marnie Forster and Erwann Fourmond and Fiacre E. Rougieux and Andr{\'e}s Cuevas and Ryo Gotoh and Kohei Fujiwara and Satoshi Uda and Mustapha Lemiti},
Related Articles Inelastic carrier lifetime in bilayer graphene Appl. Phys. Lett. 100, 032106 (2012) Carrier dynamics in bulk GaN J. Appl. Phys. 111, 023702 (2012) Photon recycling effect on electroluminescent refrigeration J. Appl. Phys. 111, 014511 (2012) Characterization of deep levels in n-type and semi-insulating 4H-SiC epitaxial layers by thermally stimulated current spectroscopy J. Appl. Phys. 111, 014910 (2012) Monte Carlo analysis of electron relaxation process and transport property… CONTINUE READING


Publications citing this paper.
Showing 1-7 of 7 extracted citations

Similar Papers

Loading similar papers…