Boron nitride substrates for high-quality graphene electronics.

  title={Boron nitride substrates for high-quality graphene electronics.},
  author={Cory R. Dean and Andrea F. Young and Inanc Meric and C. Lee and L. Wang and Sebastian Sorgenfrei and K. Watanabe and Takashi Taniguchi and Philip Kim and Kenneth L. Shepard and James C. Hone},
  journal={Nature nanotechnology},
  volume={5 10},
Graphene devices on standard SiO(2) substrates are highly disordered, exhibiting characteristics that are far inferior to the expected intrinsic properties of graphene. Although suspending the graphene above the substrate leads to a substantial improvement in device quality, this geometry imposes severe limitations on device architecture and functionality. There is a growing need, therefore, to identify dielectrics that allow a substrate-supported geometry while retaining the quality achieved… 
Electronic properties of graphene encapsulated with different two-dimensional atomic crystals.
This work reports on the search for alternative substrates for making quality graphene heterostructures using atomically flat crystals and attributes the difference mainly to self-cleansing that takes place at interfaces between graphene, hBN, and transition metal dichalcogenides.
Advancing quasi-freestanding epitaxial graphene electronics through integration of wafer scale hexagonal boron nitride dielectrics
A key limitation to graphene based electronics is graphene’s interaction with dielectric interfaces. SiO2 and various high-k gate dielectrics can introduce scattering from charged surface states,
High‐Performance Graphene Devices on SiO2/Si Substrate Modified by Highly Ordered Self‐Assembled Monolayers
This work has found that suppression of unintentional substrate doping effects can be achieved by insertion of hydrophobic self-assembled layers (hexamethyldisilane), and utilization of surface/interface engineering to modify the existing commercially available substrates is more useful because of the convenient and mature production process, low leakage current, small surface roughness, best optical contrast.
Hexagonal boron nitride: a promising substrate for graphene with high heat dissipation.
Bulk hexagonal boron nitride (h-BN) is demonstrated to be a more appealing substrate to achieve high performance heat dissipation in supported graphene, and the smooth and atomically flat h-BN substrate gives rise to a regular and weak stress distribution in graphene, resulting in a less affected phonon relaxation time and dominant phonon mean free path.
In-plane heterostructures of graphene and hexagonal boron nitride with controlled domain sizes.
It is shown that planar graphene/h-BN heterostructures can be formed by growing graphene in lithographically patterned h-BN atomic layers and that the technique can be used to fabricate two-dimensional devices, such as a split closed-loop resonator that works as a bandpass filter.
1D Edge Contacts to 2D Material Heterostructures
Graphene has been in the focus of research in many fields of applications due to its unique properties. In particular, the 2D nature, low charge carrier concentration and high mobility of carriers are
Electronic and thermoelectric properties of graphene/boron nitride in-plane heterostructures
  • V. Tran
  • Materials Science, Physics
  • 2015
Graphene is a fascinating 2-dimensional material exhibiting outstanding electronic, thermal and mechanical properties. Is this expected to have a huge potential for a wide range of applications, in
Transport in graphene on boron nitride
  • D. Ferry
  • Physics
    2012 IEEE Silicon Nanoelectronics Workshop (SNW)
  • 2012
Graphene has become of great interest in recent years for its unique band structure and prospective importance in both microwave and logic devices. Recently, the use of a boron nitride layer between


Suspended Graphene: a bridge to the Dirac point
The recent discovery of methods to isolate graphene, a one-atom-thick layer of crystalline carbon, has raised the possibility of a new class of nano-electronics devices based on the extraordinary
Graphene on a hydrophobic substrate: doping reduction and hysteresis suppression under ambient conditions.
It is demonstrated that it is possible to reliably obtain low intrinsic doping levels and to strongly suppress hysteretic behavior even in ambient air by depositing graphene on top of a thin, hydrophobic self-assembled layer of hexamethyldisilazane (HMDS).
Ultraflat graphene
Graphene monolayers that are flat down to the atomic level are fabricated by deposition on the atomically flat terraces of cleaved mica surfaces, indicating the suppression of any existing intrinsic ripples in graphene.
Single-layer graphene on Al2O3/Si substrate: better contrast and higher performance of graphene transistors.
The studies show that the contrast of single-layer graphene on 72 nm Al(2)O(3)/Si substrate is much better than that ofsingle- layer graphene on 300 nm SiO(2/Si substrate, which shows a more than sevenfold increase in transconductance.
High-mobility few-layer graphene field effect transistors fabricated on epitaxial ferroelectric gate oxides.
The carrier mobility mu of few-layer graphene (FLG) field-effect transistors increases tenfold when the SiO2 substrate is replaced by single-crystal epitaxial Pb(Zr0.2Ti0.8)O3 (PZT). In the
Graphene transistors.
It is concluded that the excellent mobility of graphene may not, as is often assumed, be its most compelling feature from a device perspective and the possibility of making devices with channels that are extremely thin that will allow graphene field-effect transistors to be scaled to shorter channel lengths and higher speeds without encountering the adverse short-channel effects that restrict the performance of existing devices.
Intrinsic and extrinsic performance limits of graphene devices on SiO2.
It is shown that electron-acoustic phonon scattering is indeed independent of n, and contributes only 30 Omega to graphene's room-temperature resistivity, and its magnitude, temperature dependence and carrier-density dependence are consistent with extrinsic scattering by surface phonons at the SiO2 substrate.
Atomic structure of graphene on SiO2.
Atomic structures and nanoscale morphology of graphene-based electronic devices are revealed for the first time and a strong spatially dependent perturbation is revealed which breaks the hexagonal lattice symmetry of the graphitic lattice.
Substrate-limited electron dynamics in graphene
We study the effects of polarizable substrates such as $\mathrm{Si}{\mathrm{O}}_{2}$ and SiC on the carrier dynamics in graphene. We find that the quasiparticle spectrum acquires a finite broadening
Current saturation in zero-bandgap, top-gated graphene field-effect transistors.
The first observation of saturating transistor characteristics in a graphene field-effect transistor is reported, demonstrating the feasibility of two-dimensional graphene devices for analogue and radio-frequency circuit applications without the need for bandgap engineering.