Boron nitride substrates for high-quality graphene electronics.

@article{Dean2010BoronNS,
  title={Boron nitride substrates for high-quality graphene electronics.},
  author={C. Dean and A. F. Young and I. Meric and C. Lee and L. Wang and S. Sorgenfrei and K. Watanabe and T. Taniguchi and P. Kim and K. Shepard and J. Hone},
  journal={Nature nanotechnology},
  year={2010},
  volume={5 10},
  pages={
          722-6
        }
}
Graphene devices on standard SiO(2) substrates are highly disordered, exhibiting characteristics that are far inferior to the expected intrinsic properties of graphene. Although suspending the graphene above the substrate leads to a substantial improvement in device quality, this geometry imposes severe limitations on device architecture and functionality. There is a growing need, therefore, to identify dielectrics that allow a substrate-supported geometry while retaining the quality achieved… Expand
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