Boron nitride substrates for high mobility chemical vapor deposited graphene

@article{Gannett2011BoronNS,
  title={Boron nitride substrates for high mobility chemical vapor deposited graphene},
  author={Will Gannett and William Regan and K. Watanabe and Takashi Taniguchi and Michael F. Crommie and Alex Zettl},
  journal={Applied Physics Letters},
  year={2011},
  volume={98},
  pages={242105}
}
Chemical vapor deposited (CVD) graphene is often presented as a scalable solution to graphene device fabrication, but to date such graphene has exhibited lower mobility than that produced by exfoliation. Using a boron nitride underlayer, we achieve mobilities as high as 37 000 cm2/V s, an order of magnitude higher than commonly reported for CVD graphene and better than most exfoliated graphene. This result demonstrates that the barrier to scalable, high mobility CVD graphene is not the growth… 

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