Boron diffusion in silicon: the anomalies and control by point defect engineering

@inproceedings{Shao2003BoronDI,
  title={Boron diffusion in silicon: the anomalies and control by point defect engineering},
  author={Lin Hai Shao and Jiarui Liu and Quark Y. Chen and Wei-Kan Chu},
  year={2003}
}
  • Lin Hai Shao, Jiarui Liu, +1 author Wei-Kan Chu
  • Published 2003
  • Materials Science
  • Abstract The fabrication of ultra large-scale integrated (ULSI) circuits with ever shrinking feature size requires a continued reduction of diffusion lengths of dopants in Si. However, boron implants undergo an “anomalous” diffusion upon annealing, which is detrimental to the ultra-shallow junction formation. Over the last decade, boron transient diffusion has been much better understood. This implantation-induced transient-enhanced diffusion is known to be driven by the large supersaturation… CONTINUE READING

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