Boron Oxide Encapsulated Vertical Bridgman: A Method for Preventing Crystal-Crucible Contact in the CdZnTe Growth

@article{Zappettini2006BoronOE,
  title={Boron Oxide Encapsulated Vertical Bridgman: A Method for Preventing Crystal-Crucible Contact in the CdZnTe Growth},
  author={A. Zappettini and M.. Zha and M.. Pavesi and M.. Zanichelli and F.. Bissoli and L.. Zanotti and N.. Auricchio and E.. Caroli},
  journal={2006 IEEE Nuclear Science Symposium Conference Record},
  year={2006},
  volume={6},
  pages={3739-3741}
}
One of the reasons for the formation of twins and grain boundaries during the CdZnTe (CZT) crystal growth is the crystal-crucible interaction, typical of the vertical Bridgman technique. Particularly detrimental seems to be the use of quartz crucibles that ease the sticking of the crystal to the crucible walls. Due to this reason, many authors suggest the use of graphite crucibles or of carbon coated quartz crucibles. In order to avoid the contact between the growing crystal and the crucible… CONTINUE READING