Boron Emitter Passivation With Al<formula formulatype="inline"><tex Notation="TeX">$_{\bf 2}$</tex></formula>O <formula formulatype="inline"><tex Notation="TeX">$_{\bf 3}$</tex></formula> and Al<formula formulatype="inline"><tex Notation="TeX">$_{\bf 2}$</tex> </formula>O<formula formulatype="inline"><tex Notation="TeX">$_{\bf 3}$</tex></formula>/SiN<formula formulatype="inline"><tex Notation="TeX">$_{\bm x}$</tex></formula> Stacks Using ALD Al<formula formulatype="inline"><tex Notation="TeX">$_{\bf 2}$</tex></formula>O <formula formulatype="inline"><tex Notation="TeX">$_{\bf 3}$</tex></formula>

Thin layers of Al<sub>2</sub>O<sub>3</sub> are known to feature excellent passivation properties on highly boron-doped silicon surfaces. In this paper, we present a detailed study of the passivation quality of Al<sub>2</sub>O<sub>3</sub> single layers and stacks of Al<sub>2</sub>O<sub>3</sub> and antireflection SiN<sub>x</sub> on boron-doped emitters, where… CONTINUE READING