• Materials Science
  • Published 1994

Boron δ-dopin in Si atmospheric pressure CVD

@inproceedings{Kiyota1994BoronI,
  title={Boron δ-dopin in Si atmospheric pressure CVD},
  author={Yukihiro Kiyota and Tohru Nakamura and Taroh Inada},
  year={1994}
}
Boron doging was carried out by atmospheric chemical vapor deposition. The process consists of removal of native oxide, boron adsorption at 500 o C, cap-layer deposition, and solid phase epitaxy at 600 o C. From SIMS results with various primary ion energies, it was found that the boron profile has a peak at the interface between the substrate and the epitaxial layer and its full width at half maximum was a few nanometer. By evaluating the crystalline quality of the cap layer, it was found that… CONTINUE READING