Boost Up Carrier Mobility for Ferroelectric Organic Transistor Memory via Buffering Interfacial Polarization Fluctuation

@inproceedings{Sun2014BoostUC,
  title={Boost Up Carrier Mobility for Ferroelectric Organic Transistor Memory via Buffering Interfacial Polarization Fluctuation},
  author={Huabin Sun and Qijing Wang and Yun Li and Yen-Fu Lin and Yu Wang and Yao Bing Yin and Yong Xu and Chuan Liu and Kazuhito Tsukagoshi and Lijia Pan and Xizhang Wang and Zheng Hu and Yi Shi},
  booktitle={Scientific reports},
  year={2014}
}
Ferroelectric organic field-effect transistors (Fe-OFETs) have been attractive for a variety of non-volatile memory device applications. One of the critical issues of Fe-OFETs is the improvement of carrier mobility in semiconducting channels. In this article, we propose a novel interfacial buffering method that inserts an ultrathin poly(methyl methacrylate) (PMMA) between ferroelectric polymer and organic semiconductor layers. A high field-effect mobility (μFET) up to 4.6 cm(2) V(-1) s(-1) is… CONTINUE READING