Bonding 1200 V, 150 A IGBT chips (13.5 mm × 13.5 mm) with DBC substrate by pressureless sintering nanosilver paste for power electronic packaging

Abstract

The insulated gate bipolar transistor (IGBT) is a minority-carrier device with large bipolar current-carrying capability and high input impedance. The IGBT has been used in many applications in power electronics. In this study, pressureless sintering of nanosilver paste has been studied for bonding large area power chips, e.g., 12 kV 100 A IGBT applications… (More)

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