Blistering of H-implanted GaN

@inproceedings{Kucheyev2002BlisteringOH,
  title={Blistering of H-implanted GaN},
  author={S. O. Kucheyev and J. S. Williams and Chennupati Jagadish},
  year={2002}
}
Mechanisms of blistering of wurtzite GaN films implanted with H ions are studied. In particular, we report on the influence of the following parameters on the blistering process: ~i! ion energy~from 20 to 150 keV!, ~ii ! ion dose~up to 1.2310 cm!, ~iii ! implantation temperature ~from 2196 to 250 °C!, and~iv! annealing temperature ~up to 900 °C!. Results… CONTINUE READING