Black phosphorus field-effect transistors.

@article{Li2014BlackPF,
  title={Black phosphorus field-effect transistors.},
  author={Likai Li and Yijun Yu and Guo Jun Ye and Qingqin Ge and Xuedong Ou and Hua Wu and Donglai Feng and Xiangying Chen and Yuanbo Zhang},
  journal={Nature nanotechnology},
  year={2014},
  volume={9 5},
  pages={
          372-7
        }
}
Two-dimensional crystals have emerged as a class of materials that may impact future electronic technologies. Experimentally identifying and characterizing new functional two-dimensional materials is challenging, but also potentially rewarding. Here, we fabricate field-effect transistors based on few-layer black phosphorus crystals with thickness down to a few nanometres. Reliable transistor performance is achieved at room temperature in samples thinner than 7.5 nm, with drain current… Expand
Black phosphorus field-effect transistor with record drain current exceeding 1 A/mm
Two-dimensional (2D) semiconductor, such as transition metal dichalcogenides (TMDs) and black phosphorus (BP), have been extensively studied for future transistor applications because of the atomicExpand
Black phosphorus electronics
Abstract As the scaling of silicon-based field-effect transistors has approached its physical limits, the search for alternative channel materials for future logic devices has attracted muchExpand
Device Perspective on 2D Materials
  • P. Ye
  • Materials Science
  • 2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)
  • 2014
The rise of two-dimensional (2D) crystals has given new challenges and opportunities to the device research. The semiconducting MoS2 as n-channel and few-layer phosphorene as p-channel have beenExpand
Fast and broadband photoresponse of few-layer black phosphorus field-effect transistors.
TLDR
The ambipolar behavior coupled to the fast and broadband photodetection make few-layer black phosphorus a promising 2D material for photodetsection across the visible and near-infrared part of the electromagnetic spectrum. Expand
Dual-Gate Black Phosphorus Field-Effect Transistors with Hexagonal Boron Nitride as Dielectric and Passivation Layers.
TLDR
The origin of transport limitations of local-gated BP FETs are demonstrated by comparing the transport properties of hexagonal boron nitride (h-BN)-based device architectures with those of a bottom-gations of a Si/SiO2 substrate by using h-BN as passivation and dielectric layers. Expand
Investigation of black phosphorus field-effect transistors and its stability
In this paper, the electrical properties of black phosphorus(BP) are investigated. Back-gated field-effect transistors (FETs) array with different channel length are fabricated on the same BPExpand
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As Moore's law predicted, field-effect transistors (FETs) have been decreasing in size for several decades. In the process, these devices have suffered considerably from short-channel effects andExpand
Can a Black Phosphorus Schottky Barrier Transistor Be Good Enough?
TLDR
It appears that the ML BP SBFETs have the best intrinsic device performance among the reported sub-10 nm 2D material SBFETS, and can meet the requirements of both high performance and low power logic applications of the next decade in the latest International Technology Roadmap for Semiconductors. Expand
Few-Layer Black Phosphorus Carbide Field-Effect Transistor via Carbon Doping.
TLDR
A high-performance composite few-layer b-PC field-effect transistor fabricated via a novel carbon doping technique which achieved a high hole mobility of 1995 cm2 V-1 s-1 at room temperature is reported. Expand
Complementary Black Phosphorus Tunneling Field-Effect Transistors.
TLDR
Two complementary TFETs based on few-layer black phosphorus are demonstrated, in which multiple top gates create electrostatic doping in the source and drain regions, and atomistic simulations of the fabricated devices agree quantitatively with the current-voltage measurements. Expand
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