Black Phosphorus Transistors with Near Band Edge Contact Schottky Barrier


Black phosphorus (BP) is a new class of 2D material which holds promise for next generation transistor applications owing to its intrinsically superior carrier mobility properties. Among other issues, achieving good ohmic contacts with low source-drain parasitic resistance in BP field-effect transistors (FET) remains a challenge. For the first time, we… (More)
DOI: 10.1038/srep18000


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