Black GaAs by Metal-Assisted Chemical Etching.

@article{Lova2018BlackGB,
  title={Black GaAs by Metal-Assisted Chemical Etching.},
  author={Paola Lova and Valentina Robbiano and Franco Cacialli and Davide Comoretto and C. Soci},
  journal={ACS applied materials \& interfaces},
  year={2018},
  volume={10 39},
  pages={
          33434-33440
        }
}
  • P. Lova, V. Robbiano, C. Soci
  • Published 7 September 2018
  • Physics, Materials Science
  • ACS applied materials & interfaces
Large area surface microstructuring is commonly employed to suppress light reflection and enhance light absorption in silicon photovoltaic devices, photodetectors, and image sensors. To date, however, there are no simple means to control the surface roughness of III-V semiconductors by chemical processes similar to the metal-assisted chemical etching of black Si. Here, we demonstrate the anisotropic metal-assisted chemical etching of GaAs wafers exploiting the lower etching rate of the… 

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