Bistable Organic Materials in Optoelectrical Switches: Two-Electrode Devices vs Organic Field Effect Transistors
@article{Sworakowski2022BistableOM, title={Bistable Organic Materials in Optoelectrical Switches: Two-Electrode Devices vs Organic Field Effect Transistors}, author={Juliusz Sworakowski and Petro Lutsyk}, journal={Ukrainian Journal of Physics}, year={2022} }
We present a short overview of research into properties of organic materials and structures that could be used in optoelectrical switches, i.e., switches in which changes in electrical properties are triggered by light of appropriate wavelengths. In particular, we describe the structures acting by virtue of reversible photochemical reactions occurring in photochromic molecular materials.
One Citation
Propriétés électriques des nanostructures π-conjuguées
- Physics
- 2013
This thesis deals with the study of charge transport through organic semiconductors incorporated in Organic Field-Effect Transistors (OFETs). Great attention is given to the interfaces in the OFETs…
References
SHOWING 1-8 OF 8 REFERENCES
Singularities of the thermodynamic potential under second-order phase transitions due to the interband electron-phonon interaction
- Physics
- 2008
We consider phase transitions in crystals with a strong interband electron-phonon interaction. We investigate the thermodynamic potential of the system using the method of temperature Green’s…
Ph
- Education
- 1989
The following is a fundamental reading list for doctoral candidates to use as a guide in preparing for their comprehensive examination in the field of Modernism. A student is expected to have read…
Physics of Semiconductor Devices, (WileyInterscience
- New York,
- 1981
17 Polish Conference “Molecular Crystals 1028 ISSN 2071-0194
- Ukr. J. Phys. 2011. Vol. 56, No. 10 BISTABLE ORGANIC MATERIALS 2010”, September 13-17,
- 2010
17 Polish Conference “Molecular Crystals 1028 ISSN 2071-0186
- Ukr. J. Phys. 2011. Vol. 56, No. 10 BISTABLE ORGANIC MATERIALS 2010”, September 13-17,
- 2010
Thin Solid Films 438-439
- 2003