Bismuthene on a SiC substrate: A candidate for a high-temperature quantum spin Hall material

@article{Reis2017BismutheneOA,
  title={Bismuthene on a SiC substrate: A candidate for a high-temperature quantum spin Hall material},
  author={F. Reis and G. Li and L. Dudy and Maximilian Bauernfeind and Stefan Glass and Werner Hanke and Ronny Thomale and J{\"o}rg Sch{\"a}fer and Ralph Claessen},
  journal={Science},
  year={2017},
  volume={357},
  pages={287 - 290}
}
Making a large-gap topological insulator Although of interest to basic research, topological insulators (TIs) have not yet lived up to their technological potential. This is partly because their protected surface-edge state usually lives within a narrow energy gap, with its exotic transport properties overwhelmed by the ordinary bulk material. Reis et al. show that a judicious choice of materials can make the gap wide enough for the topological properties to be apparent at room temperature… Expand
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References

SHOWING 1-10 OF 54 REFERENCES
Epitaxial growth of large-gap quantum spin Hall insulator on semiconductor surface
TLDR
This work demonstrates epitaxial growth of 2D topological insulator, i.e., quantum spin Hall state, on Si(111) surface with a large energy gap, based on first-principles calculations and reveals a new formation mechanism of large-gap QSH insulator. Expand
One-dimensional edge states with giant spin splitting in a bismuth thin film.
TLDR
This work demonstrates the first experimental result that directly determines the purely 1D band structure by performing spin-resolved angle-resolving photoemission spectroscopy of Bi islands on a silicon surface that contains a metallic 1D edge structure with unexpectedly large Rashba-type spin-orbit coupling suggestive of the nontopological nature. Expand
Nonlocal Transport in the Quantum Spin Hall State
TLDR
The data confirm that the quantum transport through the (helical) edge channels is dissipationless and that the contacts lead to equilibration between the counterpropagating spin states at the edge, which agree quantitatively with the theory of the quantum spin Hall effect. Expand
Quantum Spin Hall Insulator State in HgTe Quantum Wells
TLDR
The quantum phase transition at the critical thickness, d = 6.3 nanometers, was independently determined from the magnetic field–induced insulator-to-metal transition, providing experimental evidence of the quantum spin Hall effect. Expand
Functionalized bismuth films: Giant gap quantum spin Hall and valley-polarized quantum anomalous Hall states
The search for new large band gap quantum spin Hall (QSH) and quantum anomalous Hall (QAH) insulators is critical for their realistic applications at room temperature. Here we predict, based onExpand
Quantum spin Hall effect in silicene and two-dimensional germanium.
TLDR
It is demonstrated that silicene with topologically nontrivial electronic structures can realize the quantum spin Hall effect (QSHE) by exploiting adiabatic continuity and the direct calculation of the Z(2) topological invariant. Expand
Topologically protected quantum transport in locally exfoliated bismuth at room temperature.
TLDR
This finding provides the first experimental evidence of the possibility of mechanical exfoliation of Bi bilayers, the existence of the QSH phase in a two-dimensional crystal, and, most importantly, the observation of theQSH phase at room temperature. Expand
Epitaxial growth of two-dimensional stanene.
TLDR
The synthesis of stanene and its derivatives will stimulate further experimental investigation of their theoretically predicted properties, such as a 2D topological insulating behaviour with a very large bandgap, and the capability to support enhanced thermoelectric performance, topological superconductivity and the near-room-temperature quantum anomalous Hall effect. Expand
Large-gap quantum spin Hall insulators in tin films.
TLDR
Two-dimensional tin films are QSH insulators with sizable bulk gaps of 0.3 eV, sufficiently large for practical applications at room temperature and effectively tuned by chemical functionalization and by external strain. Expand
Evidence for helical edge modes in inverted InAs/GaSb quantum wells.
TLDR
This analysis shows strong evidence for the existence of helical edge modes proposed by Liu et al, which persist in spite of sizable bulk conduction and show only a weak magnetic field dependence. Expand
...
1
2
3
4
5
...