Bipolar and Unipolar Resistive Switching in Cu-Doped $ \hbox{SiO}_{2}$

@article{Schindler2007BipolarAU,
  title={Bipolar and Unipolar Resistive Switching in Cu-Doped \$ \hbox\{SiO\}_\{2\}\$},
  author={Claudia Schindler and S. C. Puthen Thermadam and Rainer Waser and Michael N Kozicki},
  journal={IEEE Transactions on Electron Devices},
  year={2007},
  volume={54},
  pages={2762-2768}
}
Scalable nonvolatile memory devices that operate at low voltage and current, exhibit multilevel cell capability, and can be read nondestructively using simple circuitry, are highly sought after. Such devices are of particular interest if they are compatible with back-end-of-line processing for CMOS integrated circuits. A variety of resistance-change technologies show promise in this respect, but a new approach that is based on switching in copper-doped silicon dioxide may be the simplest and… CONTINUE READING

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