Bipolar and Unipolar Resistive Switching in Cu-Doped $ \hbox{SiO}_{2}$

Abstract

Scalable nonvolatile memory devices that operate at low voltage and current, exhibit multilevel cell capability, and can be read nondestructively using simple circuitry, are highly sought after. Such devices are of particular interest if they are compatible with back-end-of-line processing for CMOS integrated circuits. A variety of resistance-change… (More)

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