Bilayer insulator tunnel barriers for graphene-based vertical hot-electron transistors.

@article{Vaziri2015BilayerIT,
  title={Bilayer insulator tunnel barriers for graphene-based vertical hot-electron transistors.},
  author={Sam Vaziri and M. Belete and Eugenio Dentoni Litta and Anderson D. Smith and Grzegorz Lupina and Max C. Lemme and Mikael {\"O}stling},
  journal={Nanoscale},
  year={2015},
  volume={7 30},
  pages={13096-104}
}
Vertical graphene-based device concepts that rely on quantum mechanical tunneling are intensely being discussed in the literature for applications in electronics and optoelectronics. In this work, the carrier transport mechanisms in semiconductor-insulator-graphene (SIG) capacitors are investigated with respect to their suitability as electron emitters in vertical graphene base transistors (GBTs). Several dielectric materials as tunnel barriers are compared, including dielectric double layers… CONTINUE READING
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