Bilayer Graphene Growth by Low Pressure Chemical Vapor Deposition

Abstract

Successfully integrating graphene in standard processes for applications in electronics relies on the synthesis of high-quality films. In this work we study Low Pressure Chemical Vapor Deposition (LPCVD) growth of bilayer graphene on the outside surface of copper enclosures. The effect of several parameters on bilayer growth rate and domain size was investigated and high-coverage bilayers films were successfully grown. Furthermore, the quality of the bilayer was confirmed using Raman spectroscopy. Finally, we consider future studies that may reveal the underlying mechanisms behind bilayer growth.

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Cite this paper

@inproceedings{Fang2012BilayerGG, title={Bilayer Graphene Growth by Low Pressure Chemical Vapor Deposition}, author={Wenjing Fang and Mildred S. Dresselhaus}, year={2012} }