Bidirectional Two-Terminal Switching Device for Crossbar Array Architecture

@article{Song2011BidirectionalTS,
  title={Bidirectional Two-Terminal Switching Device for Crossbar Array Architecture},
  author={Yun Heub Song and Seung Young Park and Jung Min Lee and Hyung Jun Yang and Gyu Hyun Kil},
  journal={IEEE Electron Device Letters},
  year={2011},
  volume={32},
  pages={1023-1025}
}
We propose a bilateral switching poly-Si junction device to realize a crossbar array with a perpendicular spin-transfer torque (STT) magnetic random access memory (MRAM). An N+ /P/N+ bilateral junction device with two bias terminals provides bidirectional current flow enough to write STT MRAM by a drain induced barrier lowering under a reverse bias of N+/P. In addition, asymmetrical doping for two N+ terminals provides a high on-off ratio of 107 under read condition, which is acceptable for a… CONTINUE READING

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