Bias-stress effects in organic field-effect transistors based on self-assembled monolayer nanodielectrics.

@article{Collaux2011BiasstressEI,
  title={Bias-stress effects in organic field-effect transistors based on self-assembled monolayer nanodielectrics.},
  author={Florian Coll{\'e}aux and J. T. M. Baines c A. H. Ball and Paul H W{\"o}bkenberg and Peter J Hotchkiss and Seth R Marder and Thomas D. Anthopoulos},
  journal={Physical chemistry chemical physics : PCCP},
  year={2011},
  volume={13 32},
  pages={14387-93}
}
The electrical stability of low-voltage organic transistors based on phosphonic acid self-assembled monolayer (SAM) dielectrics is investigated using four different semiconductors. The threshold voltage shift in these devices shows a stretched-exponential time dependence under continuous gate bias with a relaxation time in the range of 10(3)-10(5) s, at… CONTINUE READING