Bias and temperature dependence of Sb-based heterostructure millimeter-wave detectors with improved sensitivity

  title={Bias and temperature dependence of Sb-based heterostructure millimeter-wave detectors with improved sensitivity},
  author={R. G. Meyers and Patrick Fay and J. Schulman and Seddon Y. Thomas and D. Chow and Jenna Zinck and Y. Boegeman and P. Deelman},
  journal={IEEE Electron Device Letters},
Nearly lattice-matched InAs/AlSb/GaSb-based heterostructure backward diodes for zero-bias millimeter wave detection were fabricated and measured. A record-high curvature, /spl gamma/=39.1 V/sup -1/, at zero bias was measured. On-wafer sensitivity measurements from 1 to 110 GHz gave a record-high average sensitivity of 3687 V/W for zero-bias operation. Further enhancement of detector sensitivity was observed with applied dc bias, with a sensitivity of 7996 V/W obtained for a 0.9 /spl mu/A bias… CONTINUE READING
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