Bias-Voltage Driven Switching of the Charge-Density-Wave and Normal Metallic Phases in 1T-TaS2 Thin-Film Devices.

@article{Geremew2019BiasVoltageDS,
  title={Bias-Voltage Driven Switching of the Charge-Density-Wave and Normal Metallic Phases in 1T-TaS2 Thin-Film Devices.},
  author={Adane K. Geremew and Sergey Rumyantsev and Fariborz Kargar and Bishwajit Debnath and Adrian Nosek and Michael Bloodgood and Marc Bockrath and Tina T. Salguero and Roger K. Lake and Alexander A. Balandin},
  journal={ACS nano},
  year={2019}
}
We report on switching among three charge-density-wave phases, commensurate, nearly commensurate, incommensurate, and the high-temperature normal metallic phase in thin-film 1T-TaS2 devices induced by application of an in-plane bias voltage. The switching among all phases has been achieved over a wide temperature range, from 77 to 400 K. The low-frequency electronic noise spectroscopy has been used as an effective tool for monitoring the transitions, particularly the switching from the… 

Figures from this paper

Evidence for a thermally driven charge-density-wave transition in 1T-TaS2 thin-film devices: Prospects for GHz switching speed

We report on the room-temperature switching of 1T-TaS2 thin-film charge-density-wave devices, using nanosecond-duration electrical pulsing to construct their time-resolved current–voltage

Electrical Gating of the Charge-Density-Wave Phases in Quasi-2D h-BN/1T-TaS$_2$ Devices

We report on electrical gating of the charge-density-wave phases and current in h -BN capped three-terminal 1T-TaS 2 heterostructure devices. It is demonstrated that the application of a gate bias

Charge-density-wave phase transitions in quasi-2D 1T-TaS2/h-BN heterostructure devices

In this invited contribution, we review recent results and report on the phase transitions and de-pinning of the charge-density waves in single-crystal 1T-TaS2 thin-film and 1T-TaS2 / h-BN

High-frequency current oscillations in charge-density-wave 1T-TaS2 devices: Revisiting the “narrow band noise” concept

We report on current oscillations in quasi two-dimensional (2D) 1T-TaS2 charge-density-wave devices. The MHz-frequency range of the oscillations and the linear dependence of the frequency of the

Low‐Frequency Electronic Noise in Quasi‐2D van der Waals Antiferromagnetic Semiconductor FePS3—Signatures of Phase Transitions

Low‐frequency current fluctuations, i.e., noise, in the quasi‐2D van der Waals antiferromagnetic semiconductor FePS3 with the electronic bandgap of 1.5 eV is investigated. The electrical and noise

Observation of room-temperature amplitude mode in quasi-one-dimensional charge-density-wave material CuTe

We have performed in-plane electrical transport and polarized Raman spectroscopy measurements on layered material CuTe to characterize the quasi-one-dimensional charge density wave (CDW). Along with

Nonequilibrium Dynamics of Gating-Induced Resistance Transition in Charge Density Wave Insulators

We present a comprehensive numerical study of the gating-induced insulator-to-metal transition in the charge density wave (CDW) state of the Holstein model. Large-scale Brownian dynamics method with

Memristive phase switching in two-dimensional 1T′-VSe2 crystals

Charge density waves (CDWs) have received extensive attention due to their unique physical properties and potential applications in oscillators and memory devices. Transition metal dichalcogenides

Gate- and Light-Tunable Negative Differential Resistance with High Peak Current Density in 1T-TaS2/2H-MoS2 T-Junction.

A negative differential resistor (NDR) is demonstrated using electrically driven CDW phase transition in an asymmetrically designed T-junction made up of 1T-TaS2/2H-MoS2 van der Waals heterostructure that achieves a peak current density in excess of 105 nA μm-2, which is about two orders of magnitude higher than that obtained in typical layered material based NDR implementations.

Observation of a topological defect lattice in the charge density wave of 1T-TaS2

Charge density wave (CDW) phases native to the transition metal dichalcogenide 1T-TaS2 are probed through a graphene layer covering its surface by using local scanning tunneling

References

SHOWING 1-10 OF 74 REFERENCES

Low-frequency noise spectroscopy of charge-density-wave phase transitions in vertical quasi-2D 1T-TaS2 devices

We report results regarding the electron transport in vertical quasi-two-dimensional (2D) layered 1T-TaS2 charge-density-wave (CDW) devices. The low-frequency noise spectroscopy was used as a tool to

A charge-density-wave oscillator based on an integrated tantalum disulfide-boron nitride-graphene device operating at room temperature.

This work demonstrates room-temperature current switching driven by a voltage-controlled phase transition between CDW states in films of 1T-TaS2 less than 10 nm thick, and exploits the transition between the nearly commensurate and the incommensurate CDW phases.

Low-Frequency Current Fluctuations and Sliding of the Charge Density Waves in Two-Dimensional Materials.

It is argued that noise spectroscopy can serve as a useful tool for understanding electronic transport phenomena in 2D CDW materials characterized by coexistence of different phases and strong pinning.

Raman Spectroscopic and Dynamic Electrical Investigation of Multi-State Charge-Wave-Density Phase Transitions in 1 T-TaS2.

Two-dimensional layered 1 T-TaS2 exhibits rich charge-density-wave (CDW) states with distinct electronic structures and physical properties, leading to broad potential applications, such as phase-transition memories, electrical oscillators and photodetectors, which indicates that the multistate transitions arise from serial transitions.

Electrically driven reversible insulator-metal phase transition in 1T-TaS2.

This work demonstrates abrupt, reversible switching of resistance in 1T-TaS2 using dc and pulsed sources, corresponding to an insulator-metal transition between the insulating Mott and equilibrium metallic states, and suggests that the transition is facilitated by a carrier driven collapse of the Mott gap.

Controlling charge-density-wave states in nano-thick crystals of 1T-TaS2

The present results demonstrate that, in the two-dimensional crystals with nanometer thickness, the first-order phase transitions are susceptible to various perturbations, suggestive of potential functions of electronic phase control.

Zone-Folded Phonons and the Commensurate-Incommensurate Charge-Density-Wave Transition in 1T-TaSe2 Thin Films.

A comparison of the Raman data with ab initio calculations of both the normal and C-CDW phases gives a consistent picture of the zone-folding of the phonon modes following lattice reconstruction.

Electric-field-induced superconductivity in an insulator.

Electric-field-induced superconductivity in an insulator is reported by using an electric-double-layer gating in an organic electrolyte using a pristine SrTiO(3) single-crystal channel, indicating this method as promising for searching for unprecedented superconducting states.

Fast electronic resistance switching involving hidden charge density wave states

This work demonstrates fast resistance switching in a charge density wave system caused by pulsed current injection, and opens the way to new concepts in non-volatile memory devices manipulating all-electronic states.

A metallic mosaic phase and the origin of Mott-insulating state in 1T-TaS2

It is discovered that the nature of the new phase is dictated by the stacking order, and the results shed fresh light on the origin of the Mott phase in 1T-TaS2.
...