Bias-Voltage Driven Switching of the Charge-Density-Wave and Normal Metallic Phases in 1T-TaS2 Thin-Film Devices.

  title={Bias-Voltage Driven Switching of the Charge-Density-Wave and Normal Metallic Phases in 1T-TaS2 Thin-Film Devices.},
  author={Adane K. Geremew and Sergey Rumyantsev and Fariborz Kargar and Bishwajit Debnath and Adrian Nosek and Michael Bloodgood and Marc Bockrath and Tina T. Salguero and Roger K. Lake and Alexander A. Balandin},
  journal={ACS nano},
We report on switching among three charge-density-wave phases, commensurate, nearly commensurate, incommensurate, and the high-temperature normal metallic phase in thin-film 1T-TaS2 devices induced by application of an in-plane bias voltage. The switching among all phases has been achieved over a wide temperature range, from 77 to 400 K. The low-frequency electronic noise spectroscopy has been used as an effective tool for monitoring the transitions, particularly the switching from the… 

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