Bias Induced Strain Effects, Short-Range Electron - Electron Interactions and Quantum Effects in AlGaN/GaN HEMTs

Abstract

In this paper we present state of the art modeling of GaN HEMTs, which includes for the first time simultaneous consideration of the electromechanical coupling, short-range Coulomb and quantum mechanical size quantization effects. Keywords-GaN HEMTs, Quantum Effects, Coulomb Effects, Electromechanical Coupling

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Cite this paper

@article{Ashok2009BiasIS, title={Bias Induced Strain Effects, Short-Range Electron - Electron Interactions and Quantum Effects in AlGaN/GaN HEMTs}, author={Ashwin Ashok and Dragica Vasileska and Stephen Marshall Goodnick and O. Hartin}, journal={2009 13th International Workshop on Computational Electronics}, year={2009}, pages={1-4} }