BiCom3HV - A 36V Complementary SiGe Bipolar- and JFET-Technology

@article{Schwartz2007BiCom3HVA,
  title={BiCom3HV - A 36V Complementary SiGe Bipolar- and JFET-Technology},
  author={Wilfrid Schwartz and Hideyuki Yasuda and Philipp Steinmann and William Boyd and Wally Meinel and Drew Hannaman and Sean Parsons},
  journal={2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting},
  year={2007},
  pages={42-45}
}
An oxide isolated complementary SiGe base bipolar technology is presented that incorporates JFETs, poly-and thin-film resistors, capacitors and Schottky Barrier diodes for high-precision, high-voltage, high speed, low-noise analog applications at significantly reduced package size.