Berry Curvature Engineering by Gating Two-Dimensional Antiferromagnets

@article{Du2019BerryCE,
  title={Berry Curvature Engineering by Gating Two-Dimensional Antiferromagnets},
  author={Shiqiao Du and Peizhe Tang and Jiaheng Li and Z. Lin and Y. Xu and W. Duan and A. Rubio},
  journal={arXiv: Materials Science},
  year={2019}
}
Recent advances in tuning electronic, magnetic, and topological properties of two-dimensional (2D) magnets have opened a new frontier in the study of quantum physics and promised exciting possibilities for future quantum technologies. In this study, we find that the dual-gate technology can well tune the electronic and topological properties of antiferromagnetic (AFM) even septuple-layer (SL) MnBi$_2$Te$_4$ thin films. Under an out-of-plane electric field that breaks $\mathcal{PT}$ symmetry… Expand

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